BEGIN:VCALENDAR VERSION:2.0 PRODID:-//linuxsoftware.nz//NONSGML Joyous v1.4//EN BEGIN:VEVENT SUMMARY:Magnetoresistive Stacks with Improved Thermal Resilience DTSTART:20250926T140000Z DTEND:20250926T160000Z DTSTAMP:20260906T120854Z UID:e5efa8f8-be81-456a-972d-fd84c39446ba SEQUENCE:1 CREATED:20250912T095919Z DESCRIPTION: Magnetic sensors are widely used in state-of-the-art electron ics and play a crucial role in industrial applications. These sensors act as transducers between magnetic fields and electrical currents and are req uired to have exceptional performance even in harsh environments. The desi gn of each thin film component is essential to ensure that these technolog ies remain competitive for next-generation applications. The unidirectiona l reference of the sensors is typically established through exchange coupl ing in antiferromagnetic/ferromagnetic bilayers. This work explores the us e of two different antiferromagnets (MnIr and MnNi) to enhance the thermal stability of tunnel magnetoresistive devices. The growth conditions and t he seed layers (Ta\, Ru\, CuN)\, were modified to produce thermally stable structures compatible with operation in harsh environments. Additionally\ , the stability of tunnel magnetoresistive sensorsto magnetic fields was a nalyzed for applications as angular sensors. Different synthetic antiferro magnets were studied\, along with their impact on the angular performance of the devices. Magnetic anisotropies and interlayer couplings were invest igated using a macrospin model\, which allowed the definition of material limits to minimize device output errors. Subsequently\, the electrical cha racterization of microfabricated sensors contributed to the understanding of the operational limits and verification the applicability of the develo ped model. Finally\, this work explored a new way to tune the linear range of magnetic sensors (anisotropic and tunnel magnetoresistive sensors) usi ng magnetic antidot structures. When applied to the ferromagnetic layers o f the sensors\, this methodology enabled the control to the linear region of such devices and modifications to their sensitivity at device/wafer lev el. This work demonstrates several strategies that can be used to improve spintronic sensing technologies and extend their operational limits. The r esults are shown to leverage the design of robust sensors targeting harsh environment applications. LAST-MODIFIED:20250912T095919Z LOCATION:Anfiteatro PA-3 (Piso -1 do Pavilhão de Matemática) do IST URL:http://df.vps.tecnico.ulisboa.pt/en/events/magnetoresistive-stacks-wit h-improved-thermal-resilience/ X-ALT-DESC;FMTTYPE=text/html:

Magnetic sensors a re widely used in state-of-the-art electronics and play a crucial role in industrial applications. These sensors act as transducers between magnetic fields and electrical currents and are required to have exceptional perfo rmance even in harsh environments. The design of each thin film component is essential to ensure that these technologies remain competitive for next -generation applications. The unidirectional reference of the sensors is t ypically established through exchange coupling in antiferromagnetic/ferrom agnetic bilayers.

This work explores the use of two different an tiferromagnets (MnIr and MnNi) to enhance the thermal stability of tunnel magnetoresistive devices. The growth conditions and the seed layers (Ta\, Ru\, CuN)\, were modified to produce thermally stable structures compatibl e with operation in harsh environments. Additionally\, the stability of tu nnel magnetoresistive sensorsto magnetic fields was analyzed for applicati ons as angular sensors. Different synthetic antiferromagnets were studied\ , along with their impact on the angular performance of the devices.

Magnetic anisotropies and interlayer couplings were investigated usin g a macrospin model\, which allowed the definition of material limits to m inimize device output errors. Subsequently\, the electrical characterizati on of microfabricated sensors contributed to the understanding of the oper ational limits and verification the applicability of the developed model. Finally\, this work explored a new way to tune the linear range of magneti c sensors (anisotropic and tunnel magnetoresistive sensors) using magnetic antidot structures.

When applied to the ferromagnetic layers of the sensors\, this methodology enabled the control to the linear region o f such devices and modifications to their sensitivity at device/wafer leve l. This work demonstrates several strategies that can be used to improve s pintronic sensing technologies and extend their operational limits. The re sults are shown to leverage the design of robust sensors targeting harsh e nvironment applications.

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