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SUMMARY:Modeling and Optimization of Multi-Level Magnetic Tunnel Junctions
  for Nanoelectronic Applications
DTSTART:20241126T140000Z
DTEND:20241126T160000Z
DTSTAMP:20260906T135838Z
UID:5ef73d71-17bf-45c6-bd60-d185baab4092
SEQUENCE:1
CREATED:20241122T153104Z
DESCRIPTION:This project investigates the design\, fabrication\, simulatio
 n\, and characterization of multi-level magnetic tunnel junction (MTJ) dev
 ices\, with the goal of optimizing their magnetic switching behavior for a
 pplications in memory and logic circuits. MTJ devices\, incorporating both
  single and two-crossed ellipses (TCE) as the free layer\, were fabricated
  and tested to examine how electrode geometry and device configuration aff
 ect multi-state stability. Magnetoresistance and planar Hall effect (PHE) 
 measurements were performed to characterize device behavior under varied f
 ield conditions\, with magnetoresistance measurements revealing performanc
 e limitations in achieving stable multi-state configurations\, while PHE m
 easurements demonstrated more consistent responses.To complement experimen
 tal work\, a theoretical model was developed to simulate the magnetic swit
 ching behavior of MTJs. This model incorporates angle-dependent adjustment
 s to demagnetization energy\, validated against micromagnetic simulations 
 using Mumax3. Despite initial limitations\, the model successfully capture
 s key aspects of the magnetic behavior\, providing a foundation for furthe
 r optimization. The absence of intermediate metrology steps during fabrica
 tion limited early detection of defects\, highlighting the need for routin
 e checks with test structures in future work. Additionally\, further simul
 ations of PHE responses and switching currents would be beneficial\, align
 ing with future efforts to implement current-driven switching in MTJ netwo
 rks.This work establishes a framework for the iterative optimization of MT
 J devices and suggests improvements to fabrication and measurement practic
 es\, supporting future development of stable\, multi-state MTJs for nanoel
 ectronic applications.
LAST-MODIFIED:20241122T153104Z
LOCATION:DF Seminar Room (2-8.3)\, 2nd floor of Physics Building
URL:http://df.vps.tecnico.ulisboa.pt/en/events/modeling-and-optimization-o
 f-multi-level-magnetic-tunnel-junctions-for-nanoelectronic-applications/
X-ALT-DESC;FMTTYPE=text/html:<p data-block-key="hsdvj">This project invest
 igates the design\, fabrication\, simulation\, and characterization of mul
 ti-level magnetic tunnel junction (MTJ) devices\, with the goal of optimiz
 ing their magnetic switching behavior for applications in memory and logic
  circuits. MTJ devices\, incorporating both single and two-crossed ellipse
 s (TCE) as the free layer\, were fabricated and tested to examine how elec
 trode geometry and device configuration affect multi-state stability. <br/
 ><br/>Magnetoresistance and planar Hall effect (PHE) measurements were per
 formed to characterize device behavior under varied field conditions\, wit
 h magnetoresistance measurements revealing performance limitations in achi
 eving stable multi-state configurations\, while PHE measurements demonstra
 ted more consistent responses.<br/><br/></p><p data-block-key="eafgh">To c
 omplement experimental work\, a theoretical model was developed to simulat
 e the magnetic switching behavior of MTJs. This model incorporates angle-d
 ependent adjustments to demagnetization energy\, validated against microma
 gnetic simulations using Mumax3. Despite initial limitations\, the model s
 uccessfully captures key aspects of the magnetic behavior\, providing a fo
 undation for further optimization.<br/><br/> The absence of intermediate m
 etrology steps during fabrication limited early detection of defects\, hig
 hlighting the need for routine checks with test structures in future work.
  Additionally\, further simulations of PHE responses and switching current
 s would be beneficial\, aligning with future efforts to implement current-
 driven switching in MTJ networks.<br/><br/></p><p data-block-key="2ip8s">T
 his work establishes a framework for the iterative optimization of MTJ dev
 ices and suggests improvements to fabrication and measurement practices\, 
 supporting future development of stable\, multi-state MTJs for nanoelectro
 nic applications.</p>
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