BEGIN:VCALENDAR VERSION:2.0 PRODID:-//linuxsoftware.nz//NONSGML Joyous v1.4//EN BEGIN:VEVENT SUMMARY:Optimizing Gallium Oxide Thin Films for Electro-Optical Applicatio ns DTSTART:20241206T160000Z DTEND:20241206T180000Z DTSTAMP:20260612T222839Z UID:a3bb7404-7786-4fe6-8e62-500e8ed1b669 SEQUENCE:1 CREATED:20241204T093719Z DESCRIPTION:Gallium Oxide is a wide-bandgap semiconductor which has shown great promise in recent years due to its distinctive opto-electrical prope rties. Its refractive index and ultra-wide bandgap can be tuned\, and it h as a very high breakdown field\, making it a promising candidate for a wid e range of applications\, such as deep-UV photodetectors\, low-loss optica l waveguides or even transparent solar cells. Among possible deposition te chniques\, RF-Sputtering stands out for its ability to produce thin films with high quality and at a low cost.In this work\, the SentiFET deposition chamber was operationalised\, and a furnace to enable high-temperature de position was designed and built. Then\, an exhaustive study was done on th e influence of different parameters\, such as deposition pressure and powe r\, post-growth annealing temperature and duration and substrate used\, on the optical and electrical properties of Ga2O3 thin films deposited by RF -Sputtering. These samples were then fully characterized through complemen tary techniques such as profilometry\, ellipsometry\, optical transmission \, Rutherford backscattering spectrometry\, X-ray diffraction\, atomic for ce microscopy and Raman spectroscopy\, in order to determine their optical and structural properties\, composition and surface roughness. To optimis e the films'\; optical and electrical properties even further\, the ef fect of doping via ion implantation with tin (Sn) was also investigated.Fi nally\, planar photodetectors with interdigitated contacts were fabricated based on these films\, through photolithography\, which were then evaluat ed in terms of their optical responsivity. LAST-MODIFIED:20241204T093719Z LOCATION:Sala de Seminários do DF\, Pavilhão de Física\, 2º piso URL:http://df.vps.tecnico.ulisboa.pt/en/events/optimizing-gallium-oxide-th in-films-for-electro-optical-applications/ X-ALT-DESC;FMTTYPE=text/html:

Gallium Oxide is a wide-bandgap semiconductor which has shown great promise in recent years d ue to its distinctive opto-electrical properties. Its refractive index and ultra-wide bandgap can be tuned\, and it has a very high breakdown field\ , making it a promising candidate for a wide range of applications\, such as deep-UV photodetectors\, low-loss optical waveguides or even transparen t solar cells. Among possible deposition techniques\, RF-Sputtering stands out for its ability to produce thin films with high quality and at a low cost.

In this work\, the SentiFET d eposition chamber was operationalised\, and a furnace to enable high-tempe rature deposition was designed and built. Then\, an exhaustive study was d one on the influence of different parameters\, such as deposition pressure and power\, post-growth annealing temperature and duration and substrate used\, on the optical and electrical properties of Ga2O3 thin films deposi ted by RF-Sputtering.

These samples were then fully characterize d through complementary techniques such as profilometry\, ellipsometry\, o ptical transmission\, Rutherford backscattering spectrometry\, X-ray diffr action\, atomic force microscopy and Raman spectroscopy\, in order to dete rmine their optical and structural properties\, composition and surface ro ughness. To optimise the films'\; optical and electrical properties ev en further\, the effect of doping via ion implantation with tin (Sn) was a lso investigated.

Finally\, planar photo detectors with interdigitated contacts were fabricated based on these film s\, through photolithography\, which were then evaluated in terms of their optical responsivity.

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