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VERSION:2.0
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BEGIN:VEVENT
SUMMARY:Characterization of Color centers in diamond for quantum sensing
DTSTART:20251119T150000Z
DTEND:20251119T170000Z
DTSTAMP:20260807T235804Z
UID:04829e1c-ce62-4a71-b744-8e1ee2519580
SEQUENCE:2
CREATED:20251118T093824Z
DESCRIPTION:Nitrogen-Vacancy (NV) centers in diamond are versatile quantum
  systems that combine single-photon emission with spin-dependent fluoresce
 nce. These properties have established NVs as a leading platform in the fi
 elds of quantum communication\, computation\, and sensing. Their spin-depe
 ndent optical readout enables nanoscale magnetic field detection. Moreover
 \, the exceptional chemical stability and biocompatibility of diamond make
  NVs suitable for applications ranging from condensed matter to biology.In
  this work\, NV centers created in bulk diamond and nanodiamonds using dif
 ferent creation methods were characterized to investigate how fabrication 
 conditions affect their optical and spin properties. Confocal and hyperspe
 ctral microscopy\, emission spectroscopy\, fluorescence lifetime imaging m
 icroscopy and optically detected magnetic resonance experiments were emplo
 yed to probe the NV centers.A comparative analysis was conducted between N
 Vs created by ion implantation\, high-temperature electron irradiation\, a
 nd femtosecond laser writing. The ion-implanted bulk diamond presented wel
 l-defined quantum signatures with a dephasing time T2* = 118 ± 19 ns. Nan
 odiamonds with NV centers exhibited stable fluorescence\, although with br
 oader resonances indicating reduced magnetic sensitivity. In contrast\, NV
  ensembles generated by femtosecond laser writing demonstrated tunable pho
 toluminescence\, strongly dependent on laser writing parameters such as pu
 lse energy\, exposure time\, and writing depth. The NV spots\, located abo
 ut 50 μm deep\, show a long dephasing time\, T2* = 0.32 ± 0.12 μs. Thes
 e findings offer valuable insight into the optimization of NV-based quantu
 m sensors by emphasizing that the fabrication method\, which determines th
 e NV centers’ depth and local environment\, directly impacts their spin 
 and optical properties.
LAST-MODIFIED:20251118T093842Z
LOCATION:Sala V1.24 (Piso 1 do Pavilhão de Civil) do IST/Online
URL:http://df.vps.tecnico.ulisboa.pt/pt/eventos/characterization-of-color-
 centers-in-diamond-for-quantum-sensing/
X-ALT-DESC;FMTTYPE=text/html:<p data-block-key="igpl4">Nitrogen-Vacancy (N
 V) centers in diamond are versatile quantum systems that combine single-ph
 oton emission with spin-dependent fluorescence. These properties have esta
 blished NVs as a leading platform in the fields of quantum communication\,
  computation\, and sensing. Their spin-dependent optical readout enables n
 anoscale magnetic field detection. Moreover\, the exceptional chemical sta
 bility and biocompatibility of diamond make NVs suitable for applications 
 ranging from condensed matter to biology.<br/><br/></p><p data-block-key="
 7ddgj">In this work\, NV centers created in bulk diamond and nanodiamonds 
 using different creation methods were characterized to investigate how fab
 rication conditions affect their optical and spin properties. Confocal and
  hyperspectral microscopy\, emission spectroscopy\, fluorescence lifetime 
 imaging microscopy and optically detected magnetic resonance experiments w
 ere employed to probe the NV centers.<br/><br/></p><p data-block-key="4mno
 n">A comparative analysis was conducted between NVs created by ion implant
 ation\, high-temperature electron irradiation\, and femtosecond laser writ
 ing. The ion-implanted bulk diamond presented well-defined quantum signatu
 res with a dephasing time T2* = 118 ± 19 ns. Nanodiamonds with NV centers
  exhibited stable fluorescence\, although with broader resonances indicati
 ng reduced magnetic sensitivity.<br/><br/> In contrast\, NV ensembles gene
 rated by femtosecond laser writing demonstrated tunable photoluminescence\
 , strongly dependent on laser writing parameters such as pulse energy\, ex
 posure time\, and writing depth. The NV spots\, located about 50 μm deep\
 , show a long dephasing time\, T2* = 0.32 ± 0.12 μs. These findings offe
 r valuable insight into the optimization of NV-based quantum sensors by em
 phasizing that the fabrication method\, which determines the NV centers’
  depth and local environment\, directly impacts their spin and optical pro
 perties.</p>
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