BEGIN:VCALENDAR
VERSION:2.0
PRODID:-//linuxsoftware.nz//NONSGML Joyous v1.4//EN
BEGIN:VEVENT
SUMMARY:Ion-implanted gallium oxide for small-field beam dosimetry
DTSTART:20241011T103000Z
DTEND:20241011T120000Z
DTSTAMP:20260730T080239Z
UID:e2c19f61-6b63-4701-b4af-d89c69143c05
SEQUENCE:2
CREATED:20241003T095818Z
DESCRIPTION: Monoclinic -Ga₂O₃ has been attracting renewed interest du
 e to its compelling properties such as its wide bandgap (~4.8 eV at room t
 emperature) and high breakdown electric field (~8 MV/cm)\, which make it s
 uitable for multiple applications\, ranging from gas detectors to power el
 ectronics. In the case of optical applications\, because of its high trans
 parency\, many different optical centres may be exploited\, with emissions
  spanning the spectral region from the ultraviolet down to the near-infrar
 ed. For instance\, the Cr3+ red/nearinfrared emission in -Ga₂O₃ has be
 en studied for its potential for ionising radiation detection in the conte
 xt of optical in-vivo dosimetry. Moreover\, thanks to the (100) easy-cleav
 age plane\, it is possible to produce thin flakes by conventional mechanic
 al exfoliation approaches\, such as the scotch tape method\; in spite of b
 eing useful for fast prototyping\, these techniques lack reproducibility a
 nd control. Recently\, we developed an innovative process for the fabricat
 ion of single-crystalline -Ga₂O₃ microtubes and nanomembranes based on
  ion implantation. Additionally\, this process allows the tailoring of the
 ir opto-electrical properties in the same step\, thus contributing to its 
 scalability for future industrial applications. In this context\, this pro
 ject aims at establishing a doping and strain engineering strategy to prod
 uce and to tune the properties of -Ga₂O₃ nanomembranes for application
 s in small-field beam dosimetry. The fundamental physical processes underl
 ying this innovative processing technology are currently under investigati
 on by applying a powerful combination of experimental material characteris
 ation and computational techniques\, including Rutherford Backscattering S
 pectrometry and X-ray Diffraction\, as well as Molecular Dynamics simulati
 ons. The produced membranes will then be used to develop radiation detecto
 rs\, to be tested and characterised as active and/or passive dosimeters fo
 r smallfield beam 
LAST-MODIFIED:20241003T131635Z
LOCATION:Online
URL:http://df.vps.tecnico.ulisboa.pt/pt/eventos/ion-implanted-gallium-oxid
 e-for-small-field-beam-dosimetry/
X-ALT-DESC;FMTTYPE=text/html:<p data-block-key="j73x8"> Monoclinic -Ga₂O
 ₃ has been attracting renewed interest due to its compelling properties 
 such as its wide bandgap (~4.8 eV at room temperature) and high breakdown 
 electric field (~8 MV/cm)\, which make it suitable for multiple applicatio
 ns\, ranging from gas detectors to power electronics. In the case of optic
 al applications\, because of its high transparency\, many different optica
 l centres may be exploited\, with emissions spanning the spectral region f
 rom the ultraviolet down to the near-infrared.<br/><br/> For instance\, th
 e Cr3+ red/nearinfrared emission in -Ga₂O₃ has been studied for its po
 tential for ionising radiation detection in the context of optical in-vivo
  dosimetry. Moreover\, thanks to the (100) easy-cleavage plane\, it is pos
 sible to produce thin flakes by conventional mechanical exfoliation approa
 ches\, such as the scotch tape method\; in spite of being useful for fast 
 prototyping\, these techniques lack reproducibility and control.<br/><br/>
  Recently\, we developed an innovative process for the fabrication of sing
 le-crystalline -Ga₂O₃ microtubes and nanomembranes based on ion implan
 tation. Additionally\, this process allows the tailoring of their opto-ele
 ctrical properties in the same step\, thus contributing to its scalability
  for future industrial applications. In this context\, this project aims a
 t establishing a doping and strain engineering strategy to produce and to 
 tune the properties of -Ga₂O₃ nanomembranes for applications in small-
 field beam dosimetry.<br/><br/> The fundamental physical processes underly
 ing this innovative processing technology are currently under investigatio
 n by applying a powerful combination of experimental material characterisa
 tion and computational techniques\, including Rutherford Backscattering Sp
 ectrometry and X-ray Diffraction\, as well as Molecular Dynamics simulatio
 ns. The produced membranes will then be used to develop radiation detector
 s\, to be tested and characterised as active and/or passive dosimeters for
  smallfield beam </p>
END:VEVENT
END:VCALENDAR
