BEGIN:VCALENDAR VERSION:2.0 PRODID:-//linuxsoftware.nz//NONSGML Joyous v1.4//EN BEGIN:VEVENT SUMMARY:Magnetoresistive Stacks with Improved Thermal Resilience DTSTART:20250926T140000Z DTEND:20250926T160000Z DTSTAMP:20260809T165815Z UID:e5efa8f8-be81-456a-972d-fd84c39446ba SEQUENCE:2 CREATED:20250912T095928Z DESCRIPTION:Magnetic sensors are widely used in state-of-the-art electroni cs and play a crucial role in industrial applications. These sensors act a s transducers between magnetic fields and electrical currents and are requ ired to have exceptional performance even in harsh environments. The desig n of each thin film component is essential to ensure that these technologi es remain competitive for next-generation applications. The unidirectional reference of the sensors is typically established through exchange coupli ng in antiferromagnetic/ferromagnetic bilayers. This work explores the use of two different antiferromagnets (MnIr and MnNi) to enhance the thermal stability of tunnel magnetoresistive devices. The growth conditions and th e seed layers (Ta\, Ru\, CuN)\, were modified to produce thermally stable structures compatible with operation in harsh environments. Additionally\, the stability of tunnel magnetoresistive sensorsto magnetic fields was an alyzed for applications as angular sensors. Different synthetic antiferrom agnets were studied\, along with their impact on the angular performance o f the devices. Magnetic anisotropies and interlayer couplings were investi gated using a macrospin model\, which allowed the definition of material l imits to minimize device output errors. Subsequently\, the electrical char acterization of microfabricated sensors contributed to the understanding o f the operational limits and verification the applicability of the develop ed model. Finally\, this work explored a new way to tune the linear range of magnetic sensors (anisotropic and tunnel magnetoresistive sensors) usin g magnetic antidot structures. When applied to the ferromagnetic layers of the sensors\, this methodology enabled the control to the linear region o f such devices and modifications to their sensitivity at device/wafer leve l. This work demonstrates several strategies that can be used to improve s pintronic sensing technologies and extend their operational limits. The re sults are shown to leverage the design of robust sensors targeting harsh e nvironment applications. LAST-MODIFIED:20250912T095950Z LOCATION:Anfiteatro PA-3 (Piso -1 do Pavilhão de Matemática) do IST URL:http://df.vps.tecnico.ulisboa.pt/pt/eventos/magnetoresistive-stacks-wi th-improved-thermal-resilience/ X-ALT-DESC;FMTTYPE=text/html:

Magnetic sensors ar e widely used in state-of-the-art electronics and play a crucial role in i ndustrial applications. These sensors act as transducers between magnetic fields and electrical currents and are required to have exceptional perfor mance even in harsh environments. The design of each thin film component i s essential to ensure that these technologies remain competitive for next- generation applications. The unidirectional reference of the sensors is ty pically established through exchange coupling in antiferromagnetic/ferroma gnetic bilayers.

This work explores the use of two different ant iferromagnets (MnIr and MnNi) to enhance the thermal stability of tunnel m agnetoresistive devices. The growth conditions and the seed layers (Ta\, R u\, CuN)\, were modified to produce thermally stable structures compatible with operation in harsh environments. Additionally\, the stability of tun nel magnetoresistive sensorsto magnetic fields was analyzed for applicatio ns as angular sensors. Different synthetic antiferromagnets were studied\, along with their impact on the angular performance of the devices.
Magnetic anisotropies and interlayer couplings were investigated using a macrospin model\, which allowed the definition of material limits to mi nimize device output errors. Subsequently\, the electrical characterizatio n of microfabricated sensors contributed to the understanding of the opera tional limits and verification the applicability of the developed model. F inally\, this work explored a new way to tune the linear range of magnetic sensors (anisotropic and tunnel magnetoresistive sensors) using magnetic antidot structures.

When applied to the ferromagnetic layers of the sensors\, this methodology enabled the control to the linear region of such devices and modifications to their sensitivity at device/wafer level . This work demonstrates several strategies that can be used to improve sp intronic sensing technologies and extend their operational limits. The res ults are shown to leverage the design of robust sensors targeting harsh en vironment applications.

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