BEGIN:VCALENDAR
VERSION:2.0
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BEGIN:VEVENT
SUMMARY:Utilizing novel enhancement principles to develop high performance
  thermoelectrics
DTSTART:20231019T110000Z
DTEND:20231019T130000Z
DTSTAMP:20260618T045742Z
UID:517601b4-52f2-474d-84cc-58180f66048e
SEQUENCE:2
CREATED:20231018T104007Z
DESCRIPTION:AbstractDevelopment of thermoelectric (TE) materials is import
 ant\, for energy saving via waste heat power generation [1]\, and IoT powe
 r sources [2]. For high TE performance\, tradeoffs must be overcome\, betw
 een Seebeck coefficient S and electrical conductivity s\, and between elec
 trical and thermal conductivity k [3]. For the latter\, in addition to nan
 ostructurings\, intrinsic low k mechanisms: Materials informatics approach
  [4]\, doping leading to lattice softening [5]\, heterogeneous bonding fro
 m mixed anions [6]\, etc. For the first tradeoff\, magnetism can be utiliz
 ed to enhance S via magnon drag in CuFeS2 [7] and metastable Fe2VAl-based 
 thin films [8\,9]\, paramagnon drag in CuGaTe2 [10]\, Bi2Te3 [11] etc.\, S
 pin fluctuation [12]\, Spin entropy [13]. Recently\, striking Cu doping ef
 fect in Mg3Sb2 : interstitial Cu doping lowered the phonon group velocity\
 , while doping into the grain boundaries led to very high mobilities simil
 ar to single crystals\, while being low k polycrystalline. An initial real
 istic 8-pair module exhibited efficiency of 7.3%@320oC\, while estimated m
 aterial efficiency ~11%! [14]. Tuning toward RT yielded 8-pair module with
  efficiency of 2.8%@100oC and cooling of 56.5 K [15]. Recently\, a single 
 element device of doped Mg3Sb2 achieved efficiency ~12% [16].[1] L. E. Bel
 l\, Science 321\, 1457 (2008)\, JOM\, 68\, 2673 (2016). [2] Sci. Tech. Adv
 . Mater. 19\, 836 (2018)\, MRS Bull.\, 43\, 176 (2018). [3] T. Mori\, Smal
 l 13\, 1702013 (2017)\, Energies\, 15\, 7307 (2022). [4] Energy Environ. S
 ci.\, 14\, 3579 (2021). [5] Adv. Energy Mater.\, 11\, 2101122 (2021). [6] 
 J. Mater. Chem. A\, 9\, 22660 (2021)\, J. Mater. Chem. A\, 11\, 10213 (202
 3) Hot article. [7] Angew. Chem. Int. Ed. 54\, 12909 (2015). [8] Phys. Rev
 . B\, 104\, 214421 (2021). [9] Nature 576 (7785) 85 (2019). [10] J. Mater.
  Chem. A\, 5\, 7545 (2017). [11] Mater. Today Phys.\, 9\, 100090 (2019). [
 12] Science Adv.\, 5\, eaat5935 (2019). [13] Sci. Tech. Adv. Mater.\, 22\,
  583 (2021).[14] Joule\, 5\, 1196 (2021). [15] Nature Commun.\, 13\, 1120 
 (2022). [16] Adv. Energy Mater.\, doi: 10.1002/aenm.20230166 Selected as F
 ront Cover Article.
LAST-MODIFIED:20231018T104046Z
LOCATION:CTN Auditorium
URL:http://df.vps.tecnico.ulisboa.pt/pt/eventos/utilizing-novel-enhancemen
 t-principles-to-develop-high-performance-thermoelectrics/
X-ALT-DESC;FMTTYPE=text/html:<p data-block-key="08opg">Abstract</p><p data
 -block-key="40c47">Development of thermoelectric (TE) materials is importa
 nt\, for energy saving via waste heat power generation [1]\, and IoT power
  sources [2]. For high TE performance\, tradeoffs must be overcome\, betwe
 en Seebeck coefficient S and electrical conductivity s\, and between elect
 rical and thermal conductivity k [3].<br/><br/> For the latter\, in additi
 on to nanostructurings\, intrinsic low k mechanisms: Materials informatics
  approach [4]\, doping leading to lattice softening [5]\, heterogeneous bo
 nding from mixed anions [6]\, etc. For the first tradeoff\, magnetism can 
 be utilized to enhance S via magnon drag in CuFeS2 [7] and metastable Fe2V
 Al-based thin films [8\,9]\, paramagnon drag in CuGaTe2 [10]\, Bi2Te3 [11]
  etc.\, Spin fluctuation [12]\, Spin entropy [13].<br/><br/> Recently\, st
 riking Cu doping effect in Mg3Sb2 : interstitial Cu doping lowered the pho
 non group velocity\, while doping into the grain boundaries led to very hi
 gh mobilities similar to single crystals\, while being low k polycrystalli
 ne. An initial realistic 8-pair module exhibited efficiency of 7.3%@320oC\
 , while estimated material efficiency ~11%! [14]. Tuning toward RT yielded
  8-pair module with efficiency of 2.8%@100oC and cooling of 56.5 K [15]. R
 ecently\, a single element device of doped Mg3Sb2 achieved efficiency ~12%
  [16].<br/><br/></p><p data-block-key="5f6nd"></p><p data-block-key="68fpc
 ">[1] L. E. Bell\, Science 321\, 1457 (2008)\, JOM\, 68\, 2673 (2016). [2]
  Sci. Tech. Adv. Mater. 19\, 836 (2018)\, MRS Bull.\, 43\, 176 (2018). [3]
  T. Mori\, Small 13\, 1702013 (2017)\, Energies\, 15\, 7307 (2022). [4] En
 ergy Environ. Sci.\, 14\, 3579 (2021). [5] Adv. Energy Mater.\, 11\, 21011
 22 (2021). [6] J. Mater. Chem. A\, 9\, 22660 (2021)\, J. Mater. Chem. A\, 
 11\, 10213 (2023) Hot article. [7] Angew. Chem. Int. Ed. 54\, 12909 (2015)
 . [8] Phys. Rev. B\, 104\, 214421 (2021). [9] Nature 576 (7785) 85 (2019).
  [10] J. Mater. Chem. A\, 5\, 7545 (2017). [11] Mater. Today Phys.\, 9\, 1
 00090 (2019). [12] Science Adv.\, 5\, eaat5935 (2019). [13] Sci. Tech. Adv
 . Mater.\, 22\, 583 (2021).[14] Joule\, 5\, 1196 (2021). [15] Nature Commu
 n.\, 13\, 1120 (2022). [16] Adv. Energy Mater.\, doi: 10.1002/aenm.2023016
 6 Selected as Front Cover Article.</p>
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END:VCALENDAR