Colóquio

From III-Nitride nanowires to the fabrication of nano-structured piezoelectric transducers

Prof. Noelle Gogneau

Quarta-feira, 22 de Março 2023 das 16:00 às 17:00
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PA1, Mathematics

Title: From III-Nitride nanowires to the fabrication of nano-structured piezoelectric transducers

Speaker: Dr. Noelle Gogneau

Abstract: The number of “Internet of Things” (IoTs) is constantly on a rise both in our daily life and in high-tech applications. Today, the question of their energetic autonomy is a key worldwide challenge. The recent miniaturization of electronic micro-devices, thus resulting in the reduction of their energy consumption to mW and even µW, combined with the progress in micro-nano-fabrication, have opened new perspectives to develop autonomous power systems based on the renewable energy harvesting. Among renewable energies, the mechanical deformations and vibrations, harvested using piezoelectric materials, present the advantages to be ubiquitous and permanently available.

A new class of transducers has appeared these last years, integrating nanomaterials such as 1D-nanostructures. Thanks to their large surface-to-volume, high crystalline quality and nanoscale dimensions, semiconductor nanowires (NWs) present unique advantages to significantly enhance the piezo-device performances. The attention has turned to III-Nitride NWs thanks to their high-piezoelectric coefficients and their strong piezo-generation response [1,2].

Here, we present the piezo-generation with Ga(In)N NWs going from the NW synthesis to the fabrication and testing of transducers. Our approach is based on systematic multiscale analyses. Starting from the characterization of the piezoelectric properties of unique NWs and the investigation of the piezo-mechanisms in play [3-5], we then demonstrate the high piezoelectric conversion properties of NWs on a device level [6-7].

References

[1] N. Gogneau et al. Phys. Status Solidi RRL 8, 414 (2014).

[2] N. Jegenyes, N. Gogneau et al. Nanomaterials 8, 367 (2018).

[3] N. Jamond, N. Gogneau et al. Nanoscale 9, 4610 (2017).

[4] N. Gogneau, M. Tchernycheva et al. Semicond. Sci. Technol. 31, 103002 (2016).

[5] N. Gogneau, P. Chrétien, T. Sodhi et al. Nanoscale, 14, 4965 (2022).

[6] N. Jamond, N. Gogneau et al. Nanotechnology 27, 325403 (2016).

[7] L. Lu, N. Gogneau, M. Tchernycheva et al Conference IEEE-NANO (2018).